US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 8 for "Package structure having a semiconductor functional structure and redistribution layers (RDLs)" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,459, issued on Sept. 8, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Package structure having a semiconductor functional structure and redistribution layers (RDLs)" was invented by Kai Tian (Hefei City, China), Hongwen Li (Hefei City, China), Liang Chen (Hefei City, China) and Wei Jiang (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A package structure includes an isolation layer with multiple vias, N first pads, N Redistribution Layers (RDLs), and a first insulating layer. Each via exposes a respective part of an interconnection layer arranged on a surface of a semiconductor functional structure. Each f...