ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,730,951, issued on Sept. 8, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).
"Circuit simulation method and device" was invented by Yue Chen (Hefei City, China) and Zengquan Wu (Hefei City, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A circuit simulation method includes the following: a key character string corresponding to at least one target power supply node is determined; a node identifier corresponding to the at least one target power supply node is searched out from a first netlist corresponding to the to-be-simulated circuit according to the key character string; and a power supply voltage file corresponding to the ...