US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 1 for "Semiconductor structure and method for manufacturing same" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,153, issued on Sept. 1, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor structure and method for manufacturing same" was invented by Qinghua Han (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The application provides a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes a substrate and multiple Word Lines (WLs), the multiple WLs extend along a first direction and are arranged on the substrate at intervals along a second direction, a WL isolation structure is arranged between every two adjacent WLs and includes at least a first isolation layer and a ...