US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Sept. 1 for "Semiconductor memory structure with support frame in staircase region and method of making the same" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,156, issued on Sept. 1, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor memory structure with support frame in staircase region and method of making the same" was invented by Meng Huang (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and method of manufacturing are disclosed. The semiconductor structure includes: a substrate having an adjacent array area and a peripheral region; a bit line extending along a first direction, a semiconductor channel extending along a second direction and a word line extending along a third direction located on the array area; the ladder ...