US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Oct. 20 for "Semiconductor structure and method for manufacturing semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,431, issued on Oct. 20, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor structure and method for manufacturing semiconductor structure" was invented by Shuai Guo (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the disclosure relate to the semiconductor field, and provide a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes: a substrate that has a bit line extending in a first direction; an active pillar located on the bit line, in which a bottom surface of the active pillar is in contact with the bit line, and the active pillar is dop...