US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Nov. 3 for "Semiconductor structure with a work function stacking structure and method for manufacturing same" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,257, issued on Nov. 3, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor structure with a work function stacking structure and method for manufacturing same" was invented by Chunlei Zhao (Hefei City, China), Yachao Xu (Hefei City, China), Ruiqi Zhang (Hefei City, China) and Xiaoyu Yang (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate and a word line (WL) structure. The WL structure includes: a work function stacking structure located in the substrate, where the work function stacking structure includes multiple sequentially and alternately stacked firs...