US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Nov. 3 for "Semiconductor device and manufacturing method thereof" (Chinese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,334, issued on Nov. 3, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor device and manufacturing method thereof" was invented by Kejun Mu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a semiconductor device. The semiconductor device includes: a substrate, including a first surface and a second surface opposite to each other; a gate, located on the first surface of the substrate; a source region located in the substrate on one side of the gate and a drain region located in the substrate another side of the gate; and an anti-punchthrough structure located in the substrate and including a ...