US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Nov. 3 for "Method for forming capacitor and semiconductor device" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,249, issued on Nov. 3, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Method for forming capacitor and semiconductor device" was invented by Xiaoling Wang (Hefei, China), Hai-Han Hung (Hefei, China) and Min-Hui Chang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Method for forming a capacitor includes following operations. A base is provided. First supporting layer and first sacrificial layer are formed on the base sequentially. First through holes penetrating first supporting layer and first sacrificial layer are formed to expose the base. First through holes are filled to form first filling structures. Second...