US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on May 5 for "Semiconductor memory, refresh method and electronic device" (Chinese Inventor)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,620,429, issued on May 5, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor memory, refresh method and electronic device" was invented by Huan Lu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory, a refresh method and an electronic device are provided. The semiconductor memory includes a main storage area and a mark storage area, multiple storage rows are arranged in the main storage area, and multiple first flag bits are arranged in the mark storage area. Each storage row has a correspondence with one first flag bit, and the first flag bit is used for indicating whether the storage row...