ALEXANDRIA, Va., March 3 -- United States Patent no. 12,567,458, issued on March 3, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).
"Memory and memory system" was invented by Yanzhe Tang (Anhui, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory includes a substrate, a control circuit layer located in the substrate, and at least two memory structure layers. The control circuit layer includes at least part of control circuits of the memory. The at least two memory structure layers are sequentially stacked on the control circuit layer. Each memory structure layer includes multiple memory blocks arranged in an array. The memory block includes multiple parallel Word Lines (WLs) exten...