US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on March 24 for "Transistor, semiconductor structure, memory, and method for forming same" (Chinese Inventor)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,184, issued on March 24, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Transistor, semiconductor structure, memory, and method for forming same" was invented by Yi Tang (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor includes a source structure, a trench, a drain structure, and a gate structure. The trench sequentially has first and second end faces which are arranged opposite in a first direction. The source structure extends from the first end face in a second direction. The source structure sequentially has third and fourth end faces which are arranged opposite in the first direction. The ...