US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 23 for "Method for manufacturing semiconductor device and semiconductor device" (Chinese Inventor)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,952, issued on June 23, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Method for manufacturing semiconductor device and semiconductor device" was invented by Shuai Guo (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device includes following operations. A substrate is provided, including memory array region. A plurality of bit lines are formed in memory array region. First insulating material is filled between the plurality of bit lines. A plurality of trenches intersecting with bit lines are provided in first insulating material. Memory array region includes inner reg...