US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 28 for "Semiconductor structure and preparation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,443, issued on July 28, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor structure and preparation method thereof" was invented by Xin Huang (Hefei City, China), Hongxiang Li (Hefei City, China) and Shih-Shin Wang (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A preparation method of the semiconductor structure includes: the substrate including a first area to be etched and a second area to be etched outside the first area to be etched, the etching rate of the first area to be etched and the second area to be etched are different, simultaneously etching the first area to be etched and the secon...