US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 28 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,458, issued on July 28, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Deyuan Xiao (Hefei City, China) and Kanyu Cao (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure and a manufacturing method thereof. The method of manufacturing the semiconductor structure provided by the present disclosure includes: providing a substrate; forming a base pattern on the substrate, where the base pattern includes a plurality of bit lines arranged in parallel, and an isolation structure is disposed bet...