US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 21 for "Semiconductor structure for reducing RLC parasitic parameters and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,439, issued on July 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor structure for reducing RLC parasitic parameters and manufacturing method thereof" was invented by Yuan Fang (Hefei, China) and Yanwu Wang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a base, a chip stack located on the base, and first conductive structures. The chip stack includes chips stacked in sequence in a direction perpendicular to a plane of the base, a chip includes first and second sub-portions, a first surface of the first sub-portion is flush with that of the second sub-portion, a...