US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on July 14 for "Semiconductor structure and method for forming same" (Chinese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,755, issued on July 14, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor structure and method for forming same" was invented by Mengmeng Yang (Hefei City, China) and Yi Tang (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor structure includes the following operations. A substrate is provided and includes a stacked structure and a first isolation structure that are alternately arranged in a first direction. A grid-like etched groove extending in the first direction is formed in the stacked structure and the first isolation structure, and divides the substrate in...