US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Feb. 24 for "Semiconductor structure and layout structure" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,564,042, issued on Feb. 24, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor structure and layout structure" was invented by Jing Xu (Hefei City, China) and Kangling Ji (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes: a high-speed circuit module including a clock signal with a frequency greater than a first threshold; a first conductive metal layer including power conductive wires extending along a first direction and arranged at intervals, and the power conductive wires being electrically connected with the high-speed circuit module; and a redistribution layer loc...