US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Feb. 17 for "Method for fabricating semiconductor structure, semiconductor structure, and semiconductor device" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,301, issued on Feb. 17, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for fabricating semiconductor structure, semiconductor structure, and semiconductor device" was invented by Ling-Yi Chuang (Hefei, China) and Kaimin Lv (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a fabricating method, a semiconductor structure, and a semiconductor device. The method includes: providing a plurality of chips, each of the chips includes an element region and a scribe line region arranged in a first direction; stacking the chips to form a chip module, where a stacking direction of the chips is a second d...