US Patent Issued to Changxin Memory Technologies on Feb. 17 for "Delay circuit and semiconductor memory" (Chinese Inventor)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,556,172, issued on Feb. 17, was assigned to Changxin Memory Technologies Inc. (Hefei, China).

"Delay circuit and semiconductor memory" was invented by Yu Yang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Delay circuitry includes a temperature compensation control circuit and a delay circuit. The temperature compensation control circuit is configured to generate a target temperature compensation control signal based on an initial control signal, a real-time ambient temperature signal, a temperature coefficient compensation enable signal, and a temperature coefficient control signal. The delay circuit is connected to the temperature compen...