US Patent Issued to Changxin Memory Technologies on Aug. 4 for "Semiconductor structure and forming method and operating method therefor" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,692, issued on Aug. 4, was assigned to Changxin Memory Technologies Inc. (Hefei, China).

"Semiconductor structure and forming method and operating method therefor" was invented by Takao Adachi (Hefei, China), Xiaoguang Wang (Hefei, China), Deyuan Xiao (Hefei, China) and Soonbyung Park (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes: a substrate; a memory array, including a plurality of storage cells arranged in a first direction and a second direction, where each storage cell includes an active pillar including a first channel region and a second channel region that are arranged at intervals in a third ...