US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 7 for "Semiconductor structure and method for manufacturing the same which increases the channel length" (Chinese Inventor)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,792, issued on April 7, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor structure and method for manufacturing the same which increases the channel length" was invented by Gyuseog Cho (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure is provided. The semiconductor structure includes a substrate and a gate. The substrate has an active region which includes a first doped region, a channel region and a second doped region arranged along a first direction. The gate includes a first conductive portion and at least two second conductive portions contacted with and connected to the ...