US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 7 for "Semiconductor structure and method for manufacturing memory" (Chinese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,732, issued on April 7, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor structure and method for manufacturing memory" was invented by Yi Jiang (Hefei City, China), Deyuan Xiao (Hefei City, China), Xingsong Su (Hefei City, China) and Youming Liu (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a plurality memory group provided in rows, each of the memory groups includes a plurality of memories arranged at intervals along a row direction, and for two adjacent ones of the memory groups, the memories in one memory group and the memories in another memory group are...