US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 7 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,736, issued on April 7, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Juanjuan Huang (Hefei City, China) and Weiping Bai (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a base and a capacitor structure. The base is provided with a capacitive contact structure. The capacitor structure is connected to the capacitive contact structure, and the capacitor structure includes a plurality of capacitor units stacked...