US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 7 for "Semiconductor structure, method for forming same and layout structure" (Chinese Inventor)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,733, issued on April 7, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor structure, method for forming same and layout structure" was invented by Yi Tang (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor structure includes the following: a substrate is provided, the substrate including a first area and a second area arranged in sequence in a second direction and T-shaped active pillars located in the first area and the second area and arranged in an array in a first direction and a third direction, the first, second and third directions being perpendicular to o...