ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,730, issued on April 7, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).
"Memory device and method for fabricating same" was invented by Jingwen Lu (Hefei, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a memory device and a method for fabricating the same, relating to the field of semiconductor technology. The method includes: forming buried gate structures in a first direction in a substrate; patterning the substrate, cutting off the buried gate structures, and forming active structures arranged at parallel intervals and isolation grooves between the active structures in a second direction, where the acti...