US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Write leveling circuit applied to memory, method for controlling write leveling circuit and memory" (Chinese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,609,148, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Write leveling circuit applied to memory, method for controlling write leveling circuit and memory" was invented by Zhiqiang Zhang (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A write leveling circuit applied to a memory includes a write signal generation unit and a sampling unit. The write signal generation unit is configured to receive a first clock signal and a first indication signal, and delay a first write signal according to the first clock signal, the first indication signal and a specified bit in the first indication signal...