US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure and method for manufacturing semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,532, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor structure and method for manufacturing semiconductor structure" was invented by Qinghua Han (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor structure includes: a substrate; and a plurality of parallel word lines and a plurality of parallel bit lines on the substrate. For each bit line, the bit line is in a zigzag shape, each two adjacent segments among segments of the bit line with the zigzag shape form a first angle, the bit line has at least one first angle, and the bit line in...