US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure and method for manufacturing semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,526, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor structure and method for manufacturing semiconductor structure" was invented by Songyu Li (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate, a barrier layer covering the substrate, first adjustment layers, and first contact structures. The substrate includes multiple spaced Active Areas (AAs). The AAs include first contact areas. The barrier layer is provided with multiple spaced first contact holes, each of which penetrates through the barrier layer and extends into the substr...