US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure and fabrication method thereof" (Chinese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,609,230, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor structure and fabrication method thereof" was invented by Tong Wu (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure and a fabrication method thereof. The semiconductor structure includes: a base, wherein the base is provided with a first surface and a second surface that are opposite to each other; a magnetic core, wherein the magnetic core is located in the base, and an orthographic projection of the magnetic core on the first surface is a closed ring pattern; a die...