US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure and fabrication method" (Chinese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,536, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor structure and fabrication method" was invented by Yizhi Zeng (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a fabricating method are disclosed. The method includes: providing a substrate; forming a bit line contact structure and a bit line on the substrate; the bit line contact structure is located between the bit line and the substrate; performing ion doping treatment on the sidewalls of the lower part of the bit line contact structure to forming a doped region; performing nitridation treat...