US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure, fabrication method for semiconductor structure and memory" (Chinese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,812, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor structure, fabrication method for semiconductor structure and memory" was invented by Shuai Guo (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a base provided with a conductive contact hole, a metal sulfide layer formed in the conductive contact hole and covering a bottom wall of the conductive contact hole, a semi-metal layer formed on a surface of the metal sulfide layer, a barrier layer covering a surface of the semi-metal layer and a sidewall of the conductive contact hole and a con...