US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor memory having discrete active regions and method of making the same" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,521, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor memory having discrete active regions and method of making the same" was invented by Yexiao Yu (Hefei City, China) and Zhongming Liu (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a method for fabricating a semiconductor memory structure. The method includes: providing a substrate; forming a stack layer on the substrate, and arranging spacer rows in the stack layer, forming a plurality of active lines, and forming a plurality of transfer pillars in the stack layer; forming a spacer structure o...