US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor layout structure and semiconductor test structure" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,786, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor layout structure and semiconductor test structure" was invented by Xiangyu Wang (Hefei City, China) and Ning Li (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor layout structure includes: active layers, each active layer including a first active area and a second active area arranged adjacent to the first active area, the first active area including first transistor areas spaced apart from each other, the second active area including second transistor areas spaced apart from each other; and gate layers, eac...