US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Method of manufacturing semiconductor structure and semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,517, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Method of manufacturing semiconductor structure and semiconductor structure" was invented by Shuai Guo (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method of manufacturing a semiconductor structure and a semiconductor structure. The manufacturing method includes: providing an initial structure, where the initial structure includes a base and an initial trench, and the initial trench exposes part of active area structures; forming a capacitor contact structure, where the capacitor contact structure c...