US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Method for forming semiconductor device and semiconductor device" (Chinese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,800, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Method for forming semiconductor device and semiconductor device" was invented by Chih-Cheng Liu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method for forming a semiconductor device, a substrate is provided; a word line is formed in the substrate by taking a first face of the substrate as an upper surface; a connecting layer electrically connected to one end of the word line is formed in part of the substrate and on the substrate; a first conducting layer is formed on the connecting layer; and a conducting plug is formed in the su...