US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Method for forming contact structure, semiconductor structure and memory" (Chinese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,802, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Method for forming contact structure, semiconductor structure and memory" was invented by Junsheng Zang (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a contact structure includes: a base is provided and a sacrificial layer is formed on the base; the sacrificial layer is patterned to form a first gap exposing the base in the sacrificial layer; a dielectric layer is deposited in the first gap; the sacrificial layer is removed to form a second gap between dielectric layers; at least part of the dielectric layer at a...