US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Manufacturing method of semiconductor structure, semiconductor structure, and memory" (Chinese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,518, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Manufacturing method of semiconductor structure, semiconductor structure, and memory" was invented by Yizhi Zeng (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a manufacturing method of a semiconductor structure, a semiconductor structure, and a memory. The manufacturing method of a semiconductor structure includes: providing a substrate, where the substrate includes an array region, a core region, and a boundary region located between the array region and the core region; forming a first isolation lay...