US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 14 for "Semiconductor device and a manufacturing method" (Chinese Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,455, issued on April 14, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor device and a manufacturing method" was invented by Ping-Heng Wu (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device manufacturing method includes: providing a substrate having a memory cell array area; forming a word line trench; forming a word line conductive layer in the word line trench; forming a photoresist on the substrate surface, and patterning it to protect the word line conductive layer in the contact areas but exposes the word line conductive layer outside the word line contact area, and etching t...