US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES, CHANGXIN JIDIAN (BEIJING) MEMORY TECHNOLOGIES on March 31 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,443, issued on March 31, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China) and CHANGXIN JIDIAN (BEIJING) MEMORY TECHNOLOGIES Co. LTD. (Beijing).

"Semiconductor structure and manufacturing method thereof" was invented by Zhaopei Cui (Hefei City, China) and Ying Song (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure and a manufacturing method thereof, and relates to the technical field of semiconductors. The semiconductor structure includes: a base, where the base includes a memory array region and a peripheral circuit region around the memory array region; a plu...