US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES, BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY on Feb. 17 for "Semiconductor structure and method for manufacturing same" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,272, issued on Feb. 17, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China) and BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY (Beijing).

"Semiconductor structure and method for manufacturing same" was invented by Guangsu Shao (Hefei, China), Deyuan Xiao (Hefei, China), Weiping Bai (Hefei, China) and Yunsong Qiu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor structure includes: forming first shallow trench isolation structures in a substrate, which isolate a plurality of active areas extending in first direction in the substrate, in which a first shallow trench isolation structu...