US Patent Issued to CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY, MIRISE Technologies, DENSO, TOYOTA JIDOSHA on Aug. 25 for "Silicon carbide single crystal ingot, silicon carbide wafer, and method for manufacturing silicon carbide single crystal" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,716,145, issued on Aug. 25, was assigned to CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY (Tokyo), MIRISE Technologies Corp. (Nisshin, Japan), DENSO Corp. (Kariya-city, Japan) and TOYOTA JIDOSHA K.K. (Toyota, Japan).

"Silicon carbide single crystal ingot, silicon carbide wafer, and method for manufacturing silicon carbide single crystal" was invented by Kiyoshi Betsuyaku (Tokyo), Norihiro Hoshino (Tokyo), Isaho Kamata (Tokyo), Hidekazu Tsuchida (Tokyo), Takeshi Okamoto (Nisshin, Japan) and Takahiro Kanda (Nisshin, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a method for manufacturing a silicon carbide single crystal, which ...