US Patent Issued to CENTRAL GLASS on July 21 for "Surface treatment method, dry etching method, cleaning method, production method for semiconductor device, and etching device" (Japanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,402, issued on July 21, was assigned to CENTRAL GLASS COMPANY Ltd. (Yamaguchi, Japan).

"Surface treatment method, dry etching method, cleaning method, production method for semiconductor device, and etching device" was invented by Kunihiro Yamauchi (Yamaguchi, Japan), Hikaru Kitayama (Yamaguchi, Japan) and Akiou Kikuchi (Yamaguchi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure aims to provide a surface treatment method using a gas composition capable of removing a metal oxide or metal at low temperatures without using plasma. The present disclosure provides a surface treatment method including bringing a gas into contac...