US Patent Issued to CANON ANELVA on July 21 for "Stacked structure, memory device and method of manufacturing stacked structure" (Japanese Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,196, issued on July 21, was assigned to CANON ANELVA Corp. (Kawasaki, Japan).

"Stacked structure, memory device and method of manufacturing stacked structure" was invented by Koji Tsunekawa (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A stacked structure includes a ferroelectric layer, and a tunnel barrier layer joined to the ferroelectric layer. The main component of the ferroelectric layer is aluminum nitride, and the main component of the tunnel barrier layer is magnesium oxide."

The patent was filed on June 28, 2022, under Application No. 17/851,178.

*For further information, including images, charts and tables, please visit: http://p...