US Patent Issued to CAMBRIDGE GAN DEVICES on Sept. 22 for "Current sensing in power semiconductor devices" (British Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,449, issued on Sept. 22, was assigned to CAMBRIDGE GAN DEVICES Ltd. (Cambridge, Great Britain).

"Current sensing in power semiconductor devices" was invented by Florin Udrea (Cambridge, Great Britain), Loizos Efthymiou (Cambridge, Great Britain), Martin Arnold (Cambridge, Great Britain), John Findlay (Cambridge, Great Britain), Sheung Wai Fung (Cambridge, Great Britain), Tara Vishin (Cambridge, Great Britain) and Paul Ryan (Cambridge, Great Britain).

According to the abstract* released by the U.S. Patent & Trademark Office: "An III-nitride power semiconductor based heterojunction device comprising a first heterojunction and a second heterojunction transistor, wherein the second ...