US Patent Issued to CAMBRIDGE GAN DEVICES on Nov. 3 for "Manufacturing methods for a power semiconductor device" (British Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,420, issued on Nov. 3, was assigned to CAMBRIDGE GAN DEVICES Ltd. (Cambridge, Great Britain).

"Manufacturing methods for a power semiconductor device" was invented by Florin Udrea (Cambridgeshire, Great Britain), Loizos Efthymiou (Cambridgeshire, Great Britain) and Ragini Jain (Cambridgeshire, Great Britain).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of making a power device, the method comprising forming a substrate layer, wherein the substrate layer comprises a doped semiconductor material; forming a drift region of a high voltage diode in the substrate layer; forming a wide-bandgap semiconductor transistor over, and in physical contact...