US Patent Issued to CAMBRIDGE GAN DEVICES on July 28 for "Power semiconductor device comprising a silicon substrate" (British Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,527, issued on July 28, was assigned to CAMBRIDGE GAN DEVICES Ltd. (Cambridge, Great Britain).

"Power semiconductor device comprising a silicon substrate" was invented by Florin Udrea (Cambridgeshire, Great Britain) and Loizos Efthymiou (Cambridgeshire, Great Britain).

According to the abstract* released by the U.S. Patent & Trademark Office: "A III-nitride power semiconductor device comprising a heterojunction transistor, the heterojunction transistor comprising: an active III-nitride semiconductor region comprising at least one heterojunction formed between a GaN layer and a AlGaN layer; a drain terminal operatively connected to the active III-nitride semiconductor region; a so...