ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,662, issued on Nov. 3, was assigned to Cambridge Enterprise Ltd. (Cambridge, Great Britain).

"Resistive switching devices and methods for their manufacture and operation" was invented by Ming Xiao (Cambridge, Great Britain), Judith Driscoll (Cambridge, Great Britain) and Markus Hellenbrand (Cambridge, Great Britain).

According to the abstract* released by the U.S. Patent & Trademark Office: "A resistive switching memory device comprises an active layer comprising an ionic conducting material. The active layer is disposed on a substrate. The device further comprises: a first electrode, a second electrode and optionally a first semiconductor layer. One of the first electrode, second...