US Patent Issued to BYD SEMICONDUCTOR on Aug. 25 for "Insulated gate bipolar transistor with an electric field stop layer and preparation method thereof, and electronic device" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,822, issued on Aug. 25, was assigned to BYD SEMICONDUCTOR COMPANY Ltd. (Shenzhen, China).

"Insulated gate bipolar transistor with an electric field stop layer and preparation method thereof, and electronic device" was invented by Hui Zhu (Shenzhen, China), Baowei Huang (Shenzhen, China) and Xiuguang Xiao (Shenzhen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An insulated gate bipolar transistor and a preparation method thereof, and an electronic device. The insulated gate bipolar transistor includes: a drift region; an electrode structure on one side of the drift region; and an electric field stop layer arranged on one side of the drift reg...