US Patent Issued to BYD on Aug. 11 for "IGBT module, motor controller, and vehicle" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,662, issued on Aug. 11, was assigned to BYD Co. Ltd. (Shenzhen, China).

"IGBT module, motor controller, and vehicle" was invented by Guangming Yang (Shenzhen, China), Axi Qi (Shenzhen, China), Xingchun Zhang (Shenzhen, China), Yilong Yu (Shenzhen, China) and Fengchuan Yu (Shenzhen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An insulated gate bipolar transistor (IGBT) assembly includes a wafer; a first heat dissipation plate and a second heat dissipation plate being disposed on two surfaces of the wafer in a thickness direction of the wafer respectively, a plurality of first heat dissipation pins being disposed at an interval from each othe...