US Patent Issued to BTQ Technologies on June 16 for "High-reliability processing-in-memory with transpose support using split-6T SRAM" (California Inventor)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,658,239, issued on June 16, was assigned to BTQ Technologies Corp. (Vancouver, Canada).

"High-reliability processing-in-memory with transpose support using split-6T SRAM" was invented by Zachary Irving Belateche (Pasadena, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A processor has a Static Random Access Memory (SRAM) array with individual SRAM cells, each individual SRAM cell has six transistors including a first access transistor, a second access transistor, a first N-Channel Metal-Oxide Semiconductor (NMOS) transistor cross-coupled with a first P-Channel Metal-Oxide Semiconductor (PMOS) transistor forms a first inverter, and a second NMOS t...